NASA Office of Logic Design

NASA Office of Logic Design

A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

 

SX-A and SX-S Series Radation Data

Read This!

Total Dose


06T-RTSX32SU-D1N8F1

 

 TOTAL IONIZING DOSE TEST REPORT
No. 06T-RTSX32SU-D1N8F1
April 24, 2006

06T-RTSX72SU-D1N2W1		 TOTAL IONIZING DOSE TEST REPORT
No. 06T-RTSX72SU-D1N2W1
April 28, 2006

RTSX72SU-D1N8A1-R1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1N8A1
September 21, 2005

04T-RTSX72U-D1AYH1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1HLH4
September 21, 2005

05T-RTSX72SU-D1MM81.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1MM81
September 2, 2005

05T-RTSX72SU-D1MM91.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1MM91
September 2, 2005

05T-RTSX32SU-D19S61_R2.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX32SU-D19S61
March 8, 2005

05T-RTSX32SU-D1AYJ1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX32SU-D1AYJ1
March 14, 2005

05T-RTSX32SU-D1JW21.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX32SU-D1JW21
March 11, 2005

05T-RTSX72SU-D1HLJ1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1HLJ1
March 1, 2005

05T-RTSX72SU-D1JW01.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 05T-RTSX72SU-D1JW01
March 10, 2005

04T-RT54SX72S-BP15146-01.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 04T-RT54SX72S-BP15146-01
April 19, 2004
 

04T-RT54SX32SU-D122H1-rev1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 04T-RT54SX32SU-D122H1
October 27, 2004
 

04T-RTSX72U-D1AYH1.pdf		 TOTAL IONIZING DOSE TEST REPORT
No. 04T-RTSX72SU-D1AYH1
December 15, 2004
 

04T-RT54SX32S(U)-D110A1.pdf

TOTAL IONIZING DOSE TEST REPORT
No. 04T-RTSX32S(U)-D110A1
September 14, 2004


04T-RT54SX32S-BP0083301.pdf

TOTAL IONIZING DOSE TEST REPORT
No. 04T-RT54SX32S-BP0083301
March 22, 2004

04T-RT54SX72S(U)-D0YMJ1.pdf

TOTAL IONIZING DOSE TEST REPORT
No. 04T-RTSX72S(U)-D0YMJ1
September 1, 2004

04T-RT54SX72S(U)-DOY311.pdf

04T-RT54SX72S(U)-DOY311_rev1.pdf

TOTAL IONIZING DOSE TEST REPORT
No. 04T-RTSX72S(U)-D0Y311
August 4, 2004

03t-rt54sx32x-t25js003.pdf

RT54SX32S Total Dose Experiment and Report
No. 03T-RT54SX32S-T25JS003
May 5, 2003

03t-rt54sx72s-t25ks006.pdf

RT54SX37S Total Dose Experiment and Report
No. 03T-RT54SX72S-T25KS006
April 25, 2003

03t-rt54sx72s-t25ks008.pdf

RT54SX37S Total Dose Experiment and Report
No. 03T-RT54SX72S-T25KS008
September 17, 2003
02t-rt54sx72s-t25ks007.pdf RT54SX72S Total Dose Experiment, L/C T25KS007
tid_4_03-rt54sx72s-t25ks006.pdf RT54SX72S Total Dose Experiment, L/C T25KS006
April 25, 2003
02t-rt54sx72s-t25ks004.pdf RT54SX72S Total Dose Experiment, L/C T25KS004
03t-rt54sx32S-t25js004.pdf
This name doesn't make sense; I didn't name it.  ;-)		 RT54SX72S Total Dose Experiment, L/C T25KS007
03t-rt54sx32s-t25js004.pdf RT54SX32S Total Dose Experiment, L/C T25JS004
lan65xx_sx72s_t25ks005_tid.htm

RT54SX72S Total Dose Experiment - LAN65xx, L/C T25KS005 (March 21, 2002)
RT54SX32S, LAN64xx, L/C T25JS001

RT54SX32S Total Dose Experiment - LAN64xx, L/C T25JS001 (February 25, 2002)
RT54SX72S_LAN67xx.html In test ... developing ... (Updated November 27, 2001).
SX32S_SX72S_tpd_comparison.jpg Sample data comparing tPD for the RT54SX32S and RT54SX72S as a function of total dose for parts currently tested.  (November 15, 2001)
SX32A_P04_LotSplit.pdf A54SX32A prototype devices (two lot splits) were tested for leakage current vs. total dose.
LAN3103.pdf
LAN3100_Composite.pdf
LAN3100_Composite_Zoomed.pdf		 LAN31xx, A54SX32A Prototype TID Test.  0.22 µm, UMC, D7584.8.
LAN3400-02_SXS_Proto.PDF
odd_even_er.pdf		 TID Test - RT54SX32S Prototype.  T25JP01 (December 12, 2000).
LAN45xx_RT54SX32S_T25JSP03A_TID.htm TID Test - RT54SX32S, L/C T25JSP03A, LAN45xx - In progress - Last update January 26, 2001
RT54SX32S_LAN48xx.html TID Test - RT54SX32S, LAN48xx, L/C T25JSP03A - June 5, 2001.
RT54SX72S_LAN6901.pdf
RT54SX72S_LAN6901_FullRun.pdf		 Early engineering total dose runs of the RT54SX72S, L/C T25KS001, measuring leakage currents. (September, 2001) (Data set updated 10/10/01).
RT54SX72S_LAN68xx.html LAN6801 Total Dose Test - Engineering Run.  (November 10, 2001)

 

SEE


SX-SU Rupture Test, BNL, November 2004		 Summary (excerpt)
  • This is an Single Event Effects test of the RT54SX32SU, 0.25 µm, UMC die and A54SX32A, 0.22 µm die for heavy ion exposure.
  • Rupture was observed in multiple samples of both device types.  Note that almost all antifuse devices have been seen to rupture over multiple manufacturers; the single exception is the 0.6 µm RTSX MEC FPGA. Current strip charts are given for all rupture events.
  • Functional failure and intermittent operation was observed; most ruptures did not result in functional failure. 

RT54SX72SU Heavy Ion Test

UMC Die, 0.25 µm
BNL, April, 2004
bnl_04_2004_sx72su.htm

 This page is the report for the destructive sections of this test run (e.g., latchup and rupture).  The single event upset portions of this test may be found on page bnl_04_2004_sx72su_seu.htm.

RT54SX72SU  Heavy Ion Test

UMC Die, 0.25 µm
BNL, April, 2004
bnl_04_2004_sx72su_seu.htm

This page is the report for the single event upset part of the test..  The  portions of this test concerning destructive effects  (e.g., latchup and rupture) may be found on page bnl_04_2004_sx72su.htm


SEE Test on Actel RT54SX32-S FPGA using Frequency Count Test Method

January 8, 2003
esa_qca0202s_c.pdf

 SUMMARY
This report presents the results from Heavy Ion test of Actel FPGA RT54SX-S manufactured by Matsushita (MEC) in a 0.25µm technology. The device has earlier been tested using a “Virtual golden chip” method [1]. In this report new SEE data is presented that have been taken with a new test method, using frequency counters. In the earlier test campaign [1] no SEU in the R- register cells was observed under static conditions up to LET of 64.5 MeV-cm2/mg. Irradiation with heavy ions under 5 MHz dynamic condition resulted in errors that had the same signature as if they were proper SEU. When lowering the FPGA operating frequency by a factor of 4 to 1.25 MHz no errors could be observed. The errors observed in 5 MHz dynamic mode are very likely due to transient effects which are clocked through to the output. The LET threshold for this effect is likely between 28 and 34 MeV-cm2/mg. With this new test method, using frequency counters, one of the two earlier tested samples have been tested with a test frequency up to 100 MHz. Irradiation with heavy ions under 100 MHz dynamic condition resulted in increased number of errors. This is well in line what we would expect for upset from transient events in the circuit that need to be clocked into registers to be detected.


TD1822 0.25 mm SEE Test

BNL0199
January 25, 1999

td1822_bnl0199.pdf

 Overview

SEE Test of Prototype 54SX-A devices.  Both R-Cell and C-C flip-flops were tested.  No antifuse rupture or latchup detected.
sx32s_r2_sx72s_r1_bnl0502.html
sx32s_r2_sx72s_r1_bnl0502.pdf
sx32s_r2_sx72s_r1_bnl0502.doc		 BNL May 20th, 2002 Test Results - RT54SX32S Rev 2 and RT54SX72S Rev 1

The goal is to verify that the changes in the new mask revision for both the RT54SX32S or RT54SX72S do not affect their SEE (single event effects) performance. The previous revisions of mask-sets of these two devices are very SEE hard. The only design-change that has any SEE implication is the redesign of the hardwired TRSTB pin in the revision-2 32S. To verify this redesign, a heavy-ion-beam test with LET (linear energy transfer) above 20 MeV-cm2/mg shall be sufficient to detect the effect of the hardwired TRSTB pin. Test data show that the LET threshold required to invoke the relevant single event abnormality (JTAG upset) is well below 20 MeV-cm2/mg. The susceptibility increases with lower bias (VCC). Bromine ion with sufficient LET was chosen to perform the test. For completeness, the new revisions for both 32S and 72S are tested. The results show that, as expected, the redesign for both the 32S or 72S has no detectable impact on single event effects.
Test_BNL0900_SX-A_UMC.htm LAN37xx, A54SX32A Prototype, SEE/Antifuse test.  0.22 µm, UMC die.  BNL, September, 2000. (September 12, 2000)
Test_BNL0800.htm First test of K-Latch @ BNL, August, 2000.  Preliminary/Experimental Concept Run.
Test_BNL0900.htm Second test of K-Latch @ BNL, September, 2000.  Preliminary/Experimental Concept Run.
Test_BNL1000.htm Third test of K-Latch @ BNL, October, 2000.  DUT uses HCLK w/ JTAG properly configured.  Preliminary/Experimental Concept Run.  (Oct. 27, 2000).
Test_BNL1000_SX-A_UMC.htm UMC 0.22 um SX-A SEE Test, BNL, October, 2000 (Nov. 8, 2000)
BNL_08_01_SX72S_MEC.htm First test of the RT54SX72S (K-Latch) at BNL, August, 2001.  S/N LAN6201, LAN6202.
BNL_08_01_A54SX16A_UMC_P22.htm SEE Test of the A54SX16A, 0.22 µm, UMC die.  Devices latched.   (September 25, 2001)
Test_BNL0900_SX-A_MEC.htm LAN32xx, A54SX32A, Prototype, SEU Test.  0.25 µm, MEC die.  BNL, September, 2000. (September 12, 2000)

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Last Revised: May 11, 2006
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