| LAN50xx_QYH580_713B50-656.html | TID Test: LAN50xx, QYH580, L/C 713B50-656 (in progress, updated 3/27/01) |
| qyh500report2.pdf | Evaluation of the Chip Express QYH500 (.pdf 47 kbytes) |
| cx2041r1.pdf | Initial TID Evaluation of the Chip Express CX2001 (.pdf 13 kbytes) |
ONEMASK_RUN1.pdf |
Tests on NASA QYH530 One Mask wafer. S/N 51 was exposed at 5 krads (Si) / Day for a total of 10.7 krads (Si). No increase in currents was observed and the part remained function. The test was terminated as a result of a power failure and additional DUTs will be tested soon. S/N 52 and S/N 53 were irradiated at 5 krads (Si) per day to 35 krad (Si). Both devices passed. (.pdf 17 kbytes). |
| CX2041_SEE_Sep_97.htm | Heavy Ion Test Data (5V) for CX2041, September, 1997 @ BNL. (.html) |
| ChipXLatchup.pdf | Summary of Chip Express Latchup Data. (.pdf 7 kbytes). |
| ChipXSEU.pdf | Summary of Chip Express SEU Performance (.pdf 8 kbytes). |
| INDQYH530.pdf | Summary of QYH530 Proton Test at Indiana University, June, 1998. Two lots of one-mask parts were tested. (.pdf 32 kbytes) |
| DITS-2_Vcc55_TID.pdf | Total Dose Tests on NASA QYH530 One Mask wafer for DITS-2/STRV-1d Flight Experiment. Vcc = 5.5VDC @ 6 krads (Si)/day. Three DUTs tested which are currently in room-temp anneal. (.pdf 11 kbytes). |
| BNL0598_QYH530_SEU_3.pdf BNL0598_QYH530_SEU_5.pdf |
SEU Data for the Chip Express QYH530 One-Mask Device at Vcc = 5.0 and 3.3 volts. Data from BNL May, 1998. (.pdf 4 kbytes) |
| BNL0598_QYH530_SEL.pdf | SEL Data for the Chip Express QYH530 One-Mask Device at Vcc = 5.0 and 3.3 volts. Data from BNL May, 1998. (.pdf 11 kbytes) |
CX3061_TID_TAM300.pdf CX3061_TID_TAM302.pdf CX3061_TID_TAM303.pdf CX3061_TID_Composite.pdf |
Initial TID Evaluation of the Chip Express CX3001 Series.
CX3061-A S/N TAM300 showed 40 krad(Si) performance. (.pdf 35 kbytes) CX3061-A S/N TAM302 showed 35 krad(Si) performance. CX3061-A S/N TAM303 showed 35 krad(Si) performance. Composite of TAM300, TAM302, and TAM303 |
| CX3061_BNL1198.pdf | Two CX3061-A devices were screened for single event latchup (SEL) and single event upset (SEU) at BNL in Nov., 1998. The SEL threshold is < 22 MeV-cm2/mg. Destructive latchup was observed. |
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