| LAN54xx.html | RT1020 Total Dose Test; L/C 0113 - 1980166. LAN54xx Series (10/24/01) |
| rh1020_clk_upset _White_paper.PDF |
"RH1020 Single Event Clock Upset Summary Report," Abstract: This report summarizes the testing and analysis of "single event clock upset" in the RH1020 for Pass 6 parts. Also included are sample SEU-rate predictions and design recommendations for risk analysis and reduction. (.pdf 74 kbytes). |
| rh1020_tid.PDF | "Qualification Total-Dose
Test Results for the Actel RH1020 FPGA," Abstract: This radiation test characterized and qualified the RH1020 FPGA to total-ionizing-dose radiation. A sample size of 5 programmed parts were exposed to gamma radiation from a cobalt-60 radiation source at 1X the specified radiation level (i.e., 300 krads{Si}) and then at 2X the specified radiation level, with all parts passing. The part is a radiation-hardened CMOS 2000-gate FPGA and is fabricated using the LMFS "RHCMOS-4EF" process merged with the Actel oxide-nitride-oxide (ONO) anti-fuse process, with LEFF = 0.8 µm, VDD = +5.0V, and ONO TEFF = 96 Å. (.pdf 41 kbytes) |
| 1020seu.pdf 1020seu_update1.pdf |
Summary of Act 1 SEU Flip-Flop
Performance. Includes A1020, A1020A, A1020B and RH1020. (.pdf 8 kbytes) Added an updated chart. Includes data from the May 1998 BNL RH1020 Heavy Ion Test. (.pdf 8 kbytes). |
| INDRH1020RevA.pdf | Summary of RH1020 Proton Test at Indiana University, June, 1998. (.pdf 9 kbytes) |
| BNL0598_RH1020_ AntifuseReport.PDF |
Summary of Heavy Ion Test on the Actel RH1020 Antifuse at BNL, May, 1998. Two units of the RH1020 showed antifuse hardness to 6.0 Volts at Bromine. (.pdf 14 kbytes). |
| Act1_SEU_Hardening.pdf | K-Mod Flip-Flop SEU test results. The K-Mod flip-flop uses 4 C-Modules in a mirror topology. This results in an increase in the SEU LET threshold as well as a substantial decrease in the upset cross-section. (.pdf 12 kbytes). |
| Act1_SEL_BNL1198.PDF | A1020B/TI and A1020Z (experimental) devices were tested for single event latchup (SEL) at BNL in Nov., 1998. The SEL threshold for the A1020B/TI is < 22 MeV-cm2/mg. No latchup was detected for the A1020Z up to an LET of 120 MeV-cm2/mg. (.pdf 10 kbytes) |
| A1020Z_TID.pdf A1020Z_TID_Lan802-805.pdf A1020Z_Anneal_LAN80x.pdf LAN80x Report |
Experimental total dose run of parts from two A1020Z lots. TID test on 4 A1020Z devices, performance about 7 krads (Si). S/N LAN802-LAN805. Annealling data on 4 A1020Z devices, after 7 krads (Si) exposure. S/N LAN802-LAN805. Full total dose report on A1020Z/LAN80x/U1RT02. |
| A1020 MA-JB52 Total Dose Test.htm | A1020 MA-JB52, date devices were irradiated. Two devices to 200 krads (Si) or greater with no significant change in Icc. One device was irradiated to 24 krads (Si) with no change in either Icc or tpd. |
| A1020B_Runaway.pdf A1020B_SEL_Report_BNL0199.PDF |
BNL-Jan,99 Latchup Study. This plot shows that a device
left in the latched state (in vacuum) may exhibit runaway. This resulted in the
device currect exceeding 800 mA. Complete latchup report for the BNL0199 A1020B SEL study. |
| Act1_Latchup_BNL0499.htm | A set of Actel A1020B (Texas Instruments foundry) FPGAs were subjected to heavy ion tests at Brookhaven National Lab, using titanium, nickel, and bromine, at normal incidence. Ion energies and ranges are detailed for each run in the table below. Worst-case voltages were used for this part, VCC = 5.5 VDC. This test is designed to compare SEL results obtained at BNL with a high energy facility, University of Michigan. |
| RH1020_LAN1700_Qual.htm | RH1020 Total Dose Test - RH1020-CQ84V - D/C 9839 - 5962F9096505QTCOJ4Z0 - LAN 17xx Series. Devices were tested to 125 krad (Si). |
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