Device AX1000 Manufacturing Technology 0.15 µm CMOS, 7 layer metal Foundry UMC Substrate Bulk Silicon Power Supply (Vcci/Vcca) 2.5V, 3.3V/1.5V Number of Antifuse Switches 29,000,000 Number of I/O Banks 8 Number of Logic Tiles 9 Number of C-Cells 12,096 Number of R-Cells 6,048 Number of SRAM Bits 165,888 (9x18,432)

Note: CLU denotes "control logic upset"

Reference
"Single Event Upset and Hardening in 0.15 µm Antifuse-Based Field Programmable Gate Array," J.J. Wang, Member, IEEE, B. Cronquist, Member, IEEE, J. McCollum, S. Wolday, W. Wong, R. Katz, and I. Kleyner, to be presented at the 2003 Nuclear Space Radiation Effects Conference, Monterey, California, July 2003
Home - NASA Office of Logic Design
Last Revised:
July 21, 2003
Digital Engineering Institute
Web Grunt:
Richard Katz
