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A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

RT54SX16 Lot P06 Total Dose Test

Run 1

This lot of parts was fabricated in Matsushita's 0.6 µm CMOS process.  New in situ functional tests were run during the exposure of these two parts.  Functional failures were observed and the tests were terminated, per applicable test standards.   It is planned to re-start the tests with a lower total dose goal.  These plots show the performance of the devices while exposed in the NASA GSFC radiation chamber (Cobalt-60) with a dose rate of 1 krad(Si)/hour.

Several parameters are shown here.  First, supply currents, for both the 5 and 3.3 VDC supplies are plotted.  Functional failure was detected just before the small, sudden rise in current.  Next, plots of V_OH and V_OL were given; for this in situ parametric test, there was a high impedance load on the device's outputs.   Functional and V_OH/V_OL tests were run at 1 krad(Si) interval.   Power supply leakage measurements were made every 5 minutes.

In Situ Plots

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Last Revised: January 09, 2002
Digital Engineering Institute
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