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A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

RT54SX32 - LAN3600 - T6JP03

Kamikaze Runs

This lot of parts was fabricated in Matsushita's 0.6 µm CMOS process. New in situ functional tests were run during the exposure of these three parts. Functional failures were observed and the tests were terminated, per applicable test standards. It is planned to re-start the tests with a lower total dose goal. These plots show the performance of the devices while exposed in the NASA GSFC radiation chamber (Cobalt-60) with a dose rate of 1 krad(Si)/hour.

Several parameters are shown here. Functional and V_OH/V_OL tests were run at 1 krad(Si) interval. Power supply leakage measurements were made every 5 minutes.

In Situ Plots

lan3600.pdf	Basic data on S/N LAN3600.
lan3600_vol.pdf	S/N LAN3600 data with unloadef V_OL measurement.
lan3602_04.pdf	Basic data on S/N LAN3602 and LAN3604.
lan3602_04_func.pdf	S/Ns LAN3602 and LAN3604 data with Vol data, showing loss and temporary loss of functionality.
lan36xx_composite.pdf	Composite I_CC3.3V data on S/Ns LAN3600, LAN3602, and LAN3604.

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Last Revised: January 09, 2002
Digital Engineering Institute
Web Grunt: Richard Katz