NASA Office of Logic Design

A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

RT54SX72SU Heavy Ion Test

UMC Die, 0.25 µm

BNL, April, 2004

This page is the report for the destructive sections of this test run (e.g., latchup and rupture). The single event upset portions of this test may be found on page bnl_04_2004_sx72su_seu.htm.

Summary

This is an Single Event Effects test of the RT54SX72SU, 0.25 µm, UMC die for heavy ion exposure. Only results from the unprogrammed antifuse rupture portion of the test will be reported here. This test was run with both minimal supply voltages for the SEU portion of the tests and maximum voltages for the unprogrammed antifuse portion of the test. All runs will be reported.

The test was conducted at the Brookhaven National Laboratory on April 30, 2004 and was a joint effort between the NASA Office of Logic Design and Actel Corporation.

Single event latch-up (SEL) is not detected in any run; the maximum LET (linear energy transfer) used in this report is 104 MeV•cm2/mg.

Unprogrammed antifuse rupture was observed in two out of three samples. Note that almost all antifuse devices have been seen to rupture over multiple manufacturers; the single exception is the 0.6 µm RTSX MEC FPGA. Test details are given in the table below. Current strip charts are given for all rupture events and a few nominal runs for reference.

No functional failure were observed during any run, including runs with unprogrammed antifuse rupture. This is an observation only limited to this experiment.

The antifuse is constructed between the top two layers of metal. Thus, the penetration depth of heavy ions at the BNL facility is not an issue for unprogrammed antifuse rupture tests.

Device: RT54SX72SU

Package: CQFP256

Serial Nos.

LAN7001, D/C 0410
LAN7002, D/C 0411
LAN7003, D/C 0411

L/C: DOY311

Test frequency: Varied, see chart below.

Ions used: Bromine and Iodine

Antifuse rupture: Detected.

SEL: Not detected.

Loss of control, i.e., JTAG upset: not detected.

(Note for SEU testing; that data will be supplied in a separate report). Since the K-Latch uses redundant structures, the angle of rotation can be critical to making an accurate measurement. This includes not only the magnitude of the angle and the range of the ion, but also the direction of the rotation. The redundant K-Latch circuits are implemented with the redundancy in the "long" direction of the die, as showed in the figure below.

Testing was performed rotating the DUT in two directions. The main angle, which is normally used at BNL, is rotation, and is around a vertical axis as shown below. The second axis used was roll. Roll is about an axis that is perpendicular to the part - that is, in the direction of the beam.

   ++++++++++++++++++++++++++++++++++++++
   +                                    +
   +               DIE                  +
   +                                    +
   +                                    +
   ++++++++++++++++++++++++++++++++++++++
   ^                 ^
   |                 |
   PIN 1             |
                     |
                     |
                     |
                     |

               axis of rotation

The beam is going directly into the screen.


RT54SX72SU DUT and card.

Test Data

Note: Voltages in red denote either an antifuse test or a single event latchup test.

BNL
Run

DUT

Bias (V)
V_CCI/V_CCA

Ion

LET
MeV-cm²/mg

Tilt
Deg

Roll
Deg

Flux
Ions/cm²/sec

Fluence
Ions/cm²

Data
Pattern

Clock
Freq

Comments

Strip
Chart

851

LAN7001

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

Zero

10M

852

LAN7001

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

CB

10M

Nominal Strip Chart
7001b2.jpg

853

LAN7001

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

CB

10M

854

LAN7001

4.5/2.25

Br-81

43.3

30

0

1.00E+05

1.00E+07

CB

10M

855

LAN7001

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

10M

856

LAN7001

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

10M

857

LAN7001

4.5/2.25

Br-81

43.3

30

-90

1.00E+05

1.00E+07

CB

10M

858

LAN7001

4.5/2.25

Br-81

43.3

30

-90

1.00E+05

1.00E+07

CB

0.5M

859

LAN7001

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

0.5M

860

LAN7001

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

0.5M

861

LAN7001

4.5/2.25

Br-81

43.3

30

0

1.00E+05

1.00E+07

CB

0.5M

862

LAN7001

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

CB

0.5M

863

LAN7002

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

10M

864

LAN7002

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

0.5M

865

LAN7002

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

CB

10M

866

LAN7002

4.5/2.25

Br-81

37.5

0

0

1.00E+05

1.00E+07

CB

0.5M

867

LAN7002

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

10M

868

LAN7002

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

0.5M

869

LAN7003

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

10M

870

LAN7003

4.5/2.25

Br-81

53

45

-90

1.00E+05

1.00E+07

CB

0.5M

871

LAN7003

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

10M

872

LAN7003

4.5/2.25

Br-81

53

45

0

1.00E+05

1.00E+07

CB

0.5M

NASA Office of Logic Design

A scientific study of the problems of digital engineering for space flight systems, with a view to their practical solution.

RT54SX72SU Heavy Ion Test

UMC Die, 0.25 µm

BNL, April, 2004

This page is the report for the destructive sections of this test run (e.g., latchup and rupture). The single event upset portions of this test may be found on page bnl_04_2004_sx72su_seu.htm.

Summary

Test Data

A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.