An experimental lot of QL3025's were fabricated, using an epitaxial layer of approximately 6.4 microns. Latchup tests were conducted at Brookhaven National Lab, using titanium at normal incidence, for an LET = 18.7 MeV-cm2/mg. Six devices were tested in total; three from each of two wafers. Nominal voltages for this part are VCCIO = 5.0VDC (input bias) and VCC = 3.3VDC (majority of the part). Low voltage operation was also tested, attempting to find a latchup-free operating area. The results and current strip charts are shown in the table below. Because of the low LET latchup, cross-section information and latchup threshold was not measured.
| Device S/N | Run Number | Flux p/cm^2/sec |
VCCIO | VCC | Latch | Strip Chart |
S/N 20 |
T1 | 0.99 | 5.0 |
3.3 |
Yes | wok20t1.pdf |
S/N 20 |
T2 | 0.99 | 3.6 |
3.3 |
Yes | wok20t2.pdf |
S/N 21 |
T1 | 0.97 | 5.0 |
3.3 |
Yes | wok21t1.pdf |
S/N 22 |
T1 | 0.83 | 5.0 |
3.3 |
Yes | wok22t1.pdf |
S/N 70 |
T1 | 0.80 | 3.6 |
2.5 |
Yes | wok70t1.pdf |
S/N 70 |
T2 | 0.88 | 3.6 |
2.5 |
Yes | wok70t2.pdf |
S/N 70 |
T3 | 0.99 | 5.5 |
3.6 |
Yes | wok70t3.pdf |
S/N 72 |
T1 | 0.13 | 5.0 |
3.3 |
Yes | wok72t1.pdf |
S/N 76 |
T1 | 0.17 | 5.0 |
3.3 |
Yes | wok76t1.pdf |
Cross-sections of the device can be view at QL3025_EPI_Cross_Sections.htm
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Last Revised: March 29, 2002
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