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A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

Section 1.8 ACTEL FPGA Reported Results

 

Metal Step Coverage

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020 23.5 % in via            
A1280 12.5% in via            
A1020A     4.5-20% (contact/via)        

 

Current Density ( x 105 A/cm2)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020 1.08            
A1280 2.89            
A1020A     1.10        

 

Total Dose (krad (Si))

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020       300a 150    
A1280   20f   5      
A1020A     100b 100      

 

SEU LETTH (MeV-cm2/mg)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020 C-Cell       25d   25 Room to 100 °C (Aerospace only)
A1280 S-Cell           5 Room to 100 °C
A1280 C-Cell           23 Room to 100 °C
A1020A C-Cell       22d      

 

Latchup (MeV-cm2/mg)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020           Null: 15-120 Room to 100 °C
A1280           Null: 15-120 Room to 100 °C

 

Upset Rate (upsets/bit-day)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1010/A1020           3 x 10-7 Geosynchronous orbit
A1280 S-Cell       1 x 10-6   1 x 10-6 Geosynchronous orbit
A1280 C-Cell       1 x 10-7   1 x 10-7 Geosynchronous orbit

 

Life Test (pass)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1020 10/10 @ 2000 hrs           Marginal AC performance
A1280 10/10 @ 500 hrs            
A1020A     44/44 @ 2000 hrs       IOL drift recorded as 12-18%

 

Life Prediction

  JPL HAC TRW APL GE Astro Aerospace Comments
A1020 c16.2 yrs @ 130 °C           Ea = 0.63 dv (electromigration)
A1280 c2.2 yrs @ 130 °C          
A1020A     1.9 yrs @ 130 °C      

 

Dose Rate (rads/s)

  JPL HAC TRW APL GE Astro Aerospace Comments
A1280     5.5 x 108       Output Transients
A1280     1 x 109       Permanent Data Errors
A1020     e2 x 109       Output Transients

Notes:
a @ 13 rad/sec
b @ 79 rad/sec
c for t50 single critical contact failure
d cross-section = 2.3 x 10-6 cm2/bit
e reported by Magnavox Electronics Co
f5/5 nonfunctional @ 0-hr post irradiation @ 20 krad; Idd = 150 ma max(125 °C; 48 hrs)

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Last Revised: January 09, 2002
Digital Engineering Institute
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