The ACTEL A1010/A1020 (2.0 µm-technology) and A1020A (1.2-µm technology) were characterized for SEE. A ripple counter was configured by utilizing a number of ACTEL macro's and I/O's. The devices were bombarded with different heavy ion beams at variable flux. The devices exhibited no latchup at LET <= 120 MeV/(mg/cm2). The upsets have been detected at LET >= 22 MeV/(mg/cm2). The asymptotic cross section reported by APL was 2.3 x 10-6 cm2/bit. The number reported by Aerospace Corporation was 1 x 10-4 cm2/bit.
Another test of the 2-µm technology parts using a multiple twisted ring counter containing up to 100 vulnerable bits showed an upset threshold at LET >= 15 MeV/(mg/cm2). These results were consistent at 100 °C. It should be noted that the 2-µm technology uses on C-modules and this explains why the SEU performance is more consistent.
The ACTEL A1280 (1.2-µm technology) was evaluated using C-modules and S-modules. The measured effective LET is > 15 MeV/mg/cm2) for the C-module and < 5 MeV/(mg/cm2) for the S-Module. It is fair to conclude that designs using the A1280 will have lower LET thresholds compared to those using A1020/A1020. This limitation is the result of the S-modules.
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Last Revised: January 09, 2002
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