Total dose testing was done on the A1020 and A1020 (2.0-µm) devices. One reported result for total dose is 150 krads (Si) with no functional and no post-irradiation effects (PIE) on parametric failures within 7 days of biased anneal. ICC standby leakage, input leakage, and output leakage demonstrated recovery to specification limits, or better. Other total dose tests have reported up to 300 krads (Si) with no failures. There were no PIE evaluations with the higher exposures. Based on the small sample size tested the A1020/A1020 devices are assured to 100 krad (Si). [Note that this has turned out not to be true for all lots and is also a function of dose rate. -- rk]
The A1020A (1.2 µm) has shown functional failures between 100 krad (Si) and 200 krad (Si). These devices have shown recovery of the dynamic operating leakage current within 24 hr of anneal after 200 krad (Si) exposure.
The A1280 (1.2 µm) had functional failures at 5 krad (Si), 20 krad (Si), and 70 krad (Si) at 0 hr of post-irradiation testing. Functional recovery varied from 1 hr with ambient anneal to 24 hr with temperature anneal. ICC static leakage reached levels as high as 150 mA after irradiation with 125 °C anneal. It is fair to state that the 1.2-µm device total dose results are less conclusive than those for the 2.0-µm devices, and more radiation characterization is needed. It appears at this time that the A1280 does not have much TID tolerance beyond a few krads.
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Last Revised: January 09, 2002
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