NASA Office of Logic Design

A scientific study of the problems of digital engineering for space flight systems,
with a view to their practical solution.

Memories: Memory Vendors and Research Projects

WWW Site	Technology Description	Technical Contact
Intersil Home Page
ASI Home Page	Austin Semiconductor A variety of products, some including radiation shielding. Check each product carefully (www page links supplied here for easy reference).
Welcome to Celis Semiconductor Celis-semi. (rad-hard)	Radiation Hardened FeRAM and MCMs. Technology uses Ferroelectric layered superlattice SBT (strontium bismuth tantalate) thin film capacitors with a claim for "virtually infinite endurance." Circuitry to protect data during power-up, power-down and brown-out conditions. 1T/1C and 2T/2C configurations.	Celis Semiconductor 5475 Mark Dabling Blvd., Suite 102 Colorado Springs, CO 80918-3847 Tel: (719) 260-9133 or x5159 Fax: 719-593-8540 celis@celis-semi.com
DARPA/DSO - R&D Areas	Materials and Processing Programs: Electromagnetic Materials Magnetic Materials and Devices Magnetic multilayer films are interesting due to their unique transport behavior combined with the ability to be grown and patterned using traditional semiconductor fabrication techniques. The goal of the DARPA Magnetic Materials and Devices program is to develop magnetic memory and sensors. The memory will be nonvolatile and radiation hard, have the potential density of dynamic random-access memory (DRAM) and the speed of static random-access memory (SRAM), also be low cost and low power. Sensors will be used for motion and rotation control as well as high-sensitivity magnetometers in antimine and perimeter defense. Basic materials work is being conducted to increase the Giant Magneto-Resistance (GMR) Delta-R/R ratio to 20 percent at 20 Gauss. Basic device work is being done to develop the spin transistor and spin tunneling devices. Issues include spin scattering at interfaces, as well as uniform growth and micromagnetic structure. For the spin tunneling device, controlled oxidation of the insulator is important. Existing materials processes are also being scaled up to increase memory densities.	Dr. Stuart A. Wolf swolf@darpa.mil Tel:: (703) 696-4440 or 202-767-4163 Fax: (703) 696-3999 or (703) 696-0218 Mailing Address: Attn: Dr. Stuart A. Wolf DARPA/DSO 3701 North Fairfax Drive Arlington, VA 22203-1714
Northrop Grumman	Radiation Hardened EEPROM	m.fitzpatrick@ngc.com Northrop Grumman Corporation Electronic Sensors and Systems Sector PO Box 1521 - MS3D14 Baltimore, MD 21203 Tel: (410) 765-7469 Fax:(410) 765-7652
Ramtron	Ferroelectric random access memories (FRAM). Serial and parallel configurations.	Thomas Hoyt Ramtron 1850 Ramtron Drive Colorado Springs, CO 80921 Tel: 719-481-7000 FAX: 719-481-9294
Simtek Corporation	(nvSRAM) nonvolatile Static Random Access Memory	Tel: 800-637-1667 Fax: 719-531-9481 applications@simtek.com
Maxwell Technologies	Packages die from IC manufacturers with integrated radiation shields. See application note on radiation shielding above.	Maxwell Technologies 9244 Balboa Avenue San Diego, CA 92123 Tel: (858)503-3300 Fax:(858)503-3301 info@maxwell.com
UTMC Standard Products	RadHard Memories UT28F256 PROM - 32K x 8 RadHard PROM UT28F64 PROM - 8K x 8 RadHard PROM	UTMC Microelectronic Systems Inc. 4350 Centennial Blvd. Colorado Springs, CO 80907 800-645-UTMC

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Last Revised: October 15, 2005
Digital Engineering Institute
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