Two models of Ramtron serial ferro-electric RAMs (FRAMs) were subject to a heavy ion single event latchup (SEL) test at Brookhaven National Laboratory, November, 1998. These devices are fabricated for Ramtron by Rohm and were packaged in a plastic DIP-8. One unit each of the FM24C16 and the FM25160 were tested. The details of each device are different and are not described here. Both devices contain 16 kbits of data. The devices provide non-volatile storage using a ferroelectric technology, called FRAM by Ramtron.
The devices were received shortly before the test so only a quick, informal test could be run. The devices were not subject to any functional testing with the primary goal of the test being a quick latchup screen, with only ICC being monitored.
Each device was subject to irradiation with Bromine from normal incidence, LET = 37 MeV-cm2/mg, to 60 degrees, LET = 37 MeV-cm2/mg. The supply for all runs was set at VCC = 5.5 VDC. No evidence of latchup was detected.
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